IC-HTG datasheet(8/40 Pages) ICHAUS

8 / 40 page

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iC-HTG

POWER CW LASER DIODE DRIVER

Rev A1, Page 8/40

ELECTRICAL CHARACTERISTICS

Operating Conditions: VB = 3 . . . 24 V (relative to GND), Tj = -40 . . . 125 °C unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

203 ∆ R

Resistor increment

∆

R = R(n+1)−R(n)

R(n)

3.3

204 Ileak(MDA) MD, MR leakage current

DISP = 1

-2

µA

D/A Converter

301 RES(DAC) D/A Converter Resolution

bit

302 ∆ V

Voltage increments

∆

V = V(n+1)−V(n)

V(n)

0.05

0.235

303 V(DAC)

D/A Converter

REF(9:0) = 0x000 lowest value

0.09

0.10

0.12

REF(9:0) = 0x3FF highest value

1.00

1.10

1.25

304 V(REF)

D/A Converter

V(MOD)=1.1V, Analog Modulation Enabled

REF(9:0) = 0x000 lowest value

0.09

0.10

0.12

REF(9:0) = 0x3FF highest value

1.00

1.10

1.25

305 G()

Gain Factor

ACC mode

CGAIN(1:0) = 00

1.5

2.5

CGAIN(1:0) = 01

CGAIN(1:0) = 10

CGAIN(1:0) = 11

Check Output NCHK

401 Vs()lo

Saturation Voltage lo at NCHK

I(NCHK) = 1.0 mA

0.4

402 Isc()lo

Short Circuit Current lo at NCHK V(NCHK) = 0.4 . . . 3.3 V

403 Ilk()

Leakage Current at NCHK

NCHK = 1;

V(NCHK) = 0 . . . 5.5 V

-10

µA

Series Regulator Output VDD

501 V(VDD)

Regulated output voltage

I(VDD) = -10 . . . 0 mA

NSTBY = hi

3.5

502 V(VB,VDD) Voltage Drop between VB and

VDD

VB=3 V , I(VDD) = -10 . . . 0 mA

NSTBY = hi

300

630

503 C(VDD)

Capacitor at VDD

Ri(C) < 1 Ω

3.3

µF

504 Tvdd

Settling time VDD

NSTBY lo → hi, no load at VDD,

V(VDD) 0 to 90 %

CVDD = 1 µF

505 Isc(VDD)

Short circuit current at VDD

VDD Connected to GND

-125

Digital inputs/output NCS/A1, MISO/SDA, MOSI/A0, SCLK/SCL, ID, NSTBY, EC, ANIN

601 Vt()hi

Input Threshold Voltage hi at

NCS/A1, MISO/SDA, MOSI/A0,

SCLK/SCL, ID, NSTBY, EC,

ANIN

MISO/SDA as input with INS = hi

602 Vt()lo

Input Threshold Voltage lo at

NCS/A1, MISO/SDA, MOSI/A0,

SCLK/SCL, ID, NSTBY, ANIN,

EC, ANIN

MISO/SDA as input with INS = hi

0.7

603 Vt()hys

Hysteresis at NCS/A1,

MISO/SDA, MOSI/A0,

SCLK/SCL, ID, NSTBY, ANIN,

Vt()hys = Vt()hi - Vt()lo

604 Ipd()

Pull-Down Current at MOSI/A0,

V() = 0.4 V . . . VDD

µA

605 Ipd()

Dynamic Pull-Down Current at

NSTBY

V() = 0.4 V . . . Vt()hi

µA

V() = Vt(hi) . . . VB

µA

606 Rpu()

Pull-Up Resistor at NCS/A1,

SCLK/SCL

150

260

kΩ

607 Rpu()

Pull-Up Resistor at MISO/SDA

INS = lo

kΩ

INS = hi

100

174

kΩ

608 Er()

Safe enable threshold voltage at

INS

Rising

% VDD

Falling

% VDD

609 Voc()

Open Circuit Voltage at INS

% VDD

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