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iC-DXC3

DIGITAL SENSOR I/O DRIVER

Rev B2, Page 5/12

ELECTRICAL CHARACTERISTICS

Operating Conditions: VB = 8...30 V, Tj = -40...150 °C, unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

Total Device

001 Vc()lo

Clamp Voltage lo at NIN, OE,

VOUT

I() = -1 mA

-1.4

V

002 VB

Permissible Supply Voltage

Referenced to GND

8

24

30

V

003 I(VB)

Supply Current in VB

no load,

NIN = hi, OE = lo

1.2

mA

NIN = hi, OE = hi

1.4

mA

NIN = lo, OE = hi

1.6

mA

004 V(VB)on

Turn-on threshold

increasing VB

6

8

V

005 Ilk(GND)rp Rev. Polarity Leakage Current

V(VB) = 0; V(OUT) = 0; V(GND)= 0...30 V

300

uA

006 Ilk(OUT)rp Rev. Polarity Leakage Current

V(VB)=0;V(GND)=0; V(OUT)= 0...30 V

300

uA

007 Ilk(VB)rp

Rev. Polarity Leakage Current

V(OUT) =0 ; GND open; ; V(VB)= 0...30 V

300

uA

Output characteristics

101 Vs(OUT)lo Saturation voltage Low-Side

driver

NIN = hi, OE = hi

I(OUT) = 100 mA

1.6

V

I(OUT) = 200 mA

2.2

V

102 Vs(OUT)hi Saturation voltage High-Side

driver

NIN = lo, OE = hi

I(OUT) = -100 mA

-1.6

V

I(OUT) = -200 mA

-2.2

V

103 Isc()lo

Short-Circuit Current lo in OUT

V(OUT) = 3...VB

200

450

mA

104 Isc()hi

Short-Circuit Current Hi in OUT

V() = 0...VB − 3 V

-450

-200

mA

105 llk()

Leakage Current at OUT

OUTPUT Disabled

V(OUT) = -6...0 V

-100

0

µA

V(OUT) = 0...VB

-40

40

µA

V(OUT) > VB...30 V

0

100

µA

106 SR()

Slew Rate (switch off → on,

switch on → off )

VB = 30 V, Cl = 2.2 nF, I(OUT) = 0

40

V/µs

107 Vfw(OUT)lo Freewheeling Voltage

I(OUT) = -1 mA, with reference to VB

-50

-36

V

108 Vfw(OUT)hi Freewheeling Voltage

I(OUT) = 1 mA, with reference to GND

36

50

V

Temperature Monitor

201 Toff

Over-temperature shutdown

increasing Tj

151

185

°C

202 Ton

Overtemperature release

decreasing Tj

150

180

ºC

203 Thys

Thermal Shutdown Hysteresis

5

ºC

Inputs OE, NIN

301 Vt()hi

Threshold Voltage hi at NIN, OE

2

V

302 Vt()lo

Threshold Voltage lo at NIN, OE

0.8

V

303 Vt()hys

Hysteresis at NIN, OE

Vt()hys = Vt()hi − Vt()lo

200

mV

304 Ipd()

Pull-Down Current at NIN, OE

V() > 0.6 V

2

150

µA

305 tpio

Propagation Delay

NIN, OE → OUT

2.1

6.5

µs

306 tsup()

Permissible Spurious Pulse

Width at NIN, OE

1.6

µs

307 ttrig()

Required Pulse Width at NIN, OE

4

µs

REG Series Regulator

401 V(VOUT)

Regulated output voltage

VB = 8...30 V, I(VOUT) = 10...0 mA

3

3.5

V

402 C(VOUT)

Capacitor at VOUT

I(VOUT) = 0

0

10

µF

I(VOUT) > 0

0.1

10

µF

403 Isc(VOUT) Short circuit current at VOUT

VOUT connected to GND

-125

mA