2SB930 datasheet(2/3 Pages) PANASONIC

номер детали	2SB930

подробное описание детали	For Power Amplification

PDF	3 Pages

Scroll/Zoom	100%

производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

Logo

2 / 3 page

2SB0930, 2SB0930A

SJD00012BED

VCE(sat)  IC

hFE  IC

fT  IC

PC  Ta

IC  VCE

IC  VBE

160

120

(1)TC

= T

(2)With a 50 mm

× 50 mm

× 2 mm Al heat sink

(3)Without heat sink

(PC

= 1.3 W)

(1)

(3)

(2)

Ambient temperature T

a (°C)

−12

−2

−10

−4

−8

−6

−5

−4

−3

−2

−1

= 25°C

−100 mA

−80 mA

−60 mA

−40 mA

−20 mA

−10 mA

−8 mA

−5 mA

= −120 mA

Collector-emitter voltage V

CE (V)

−2.0

−1.6

−1.2

− 0.8

− 0.4

−2

−4

−6

−10

−8

= 100°C

−25°C

°C

VCE

= −4 V

Base-emitter voltage V

BE (V)

− 0.01

− 0.1

−1

−10

−100

− 0.1

−1

−10

IC / IB

= 10

°C

= 100°C

−25°C

Collector current I

C (A)

− 0.01

− 0.1

−1

−10

VCE

= −4 V

= 100°C

°C

−25°C

Collector current I

C (A)

102

104

103

− 0.01

− 0.1

−1

−10

VCE

= −5 V

= 1 MHz

= 25°C

Collector current I

C (A)

102

104

103

− 0.01

−1

− 0.1

−1

−10

−100

−10

−100

−1000

Non repetitive pulse

= 25°C

= 10 ms

= 1 ms

ICP

= 300 ms

Collector-emitter voltage V

CE (V)

Safe operation area

Rth  t

10−2

10−1

103

102

10−4

104

103

102

10−1

10−2

10−3

(1)

(2)

(1)Without heat sink

(2)With a 50 mm

× 50 mm × 2 mm Al heat sink

Time t (s)

2SB930 датащи(PDF) 2 Page - Panasonic Semiconductor

2SB930 датащи(HTML) 2 Page - Panasonic Semiconductor

Html Pages

1 2 3

датащи скачать

ссылки URL