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MBRF20100CL датащи(PDF) 1 Page - Mospec Semiconductor

номер детали MBRF20100CL
подробное описание детали  Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
PDF  2 Pages
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производитель  MOSPEC [Mospec Semiconductor]
домашняя страница  http://www.mospec.com.tw
Logo MOSPEC - Mospec Semiconductor

MBRF20100CL датащи(HTML) 1 Page - Mospec Semiconductor

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MOSPEC
MBRF20100CL
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal.
The proprietary barrier technology allows for
reliable operation up to 175℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
175℃ Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
In compliance with EU RoHs 2002/95/EC directives
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
MAXIMUM RATINGS
Characteristic
Symbol
MBRF20100CL
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
RMS Reverse Voltage
VR(RMS)
70
V
Average Rectifier Forward Current ( per diode )
Total Device (Rated VR), TC=125℃
IF(AV)
10
20
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
20
A
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
IFSM
150
A
Operating and Storage Junction Temperature Range
TJ , Tstg
-65 to +175
100 VOLTS
ITO-220AB
MILLIMETERS
DIM
MIN
MAX
A
14.90
15.30
B
13.20
13.50
C
9.9
10.30
D
6.50
6.70
E
2.50
2.80
F
1.10
1.40
G
1.10
1.40
H
0.50
0.80
I
2.30
2.70
J
3.00
3.30
K
1.10
1.30
L
0.50
0.80
M
4.30
4.70
N
1.10
1.30
O
3.20
3.50
P
2.50
2.80
Q
THERMAL RESISTANCES
Typical Thermal Resistance junction to case ( per device )
Rθj-c
3.4
/w
3.20
3.50
R
3.40
3.80
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ. Max.
Unit
Maximum Instantaneous Forward Voltage ( per diode )
( IF =0.1 Amp TC = 25℃)
---
0.29 0.35
( IF =5.0 Amp TC = 25℃)
---
0.60 0.66
( IF =10 Amp TC = 25℃)
VF
---
0.78 0.85
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
IR
--
--
0.08
15
0.1
30
mA


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