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DS1644P датащи(PDF) 3 Page - Dallas Semiconductor |
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DS1644P датащи(HTML) 3 Page - Dallas Semiconductor |
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3 / 13 page ![]() DS1644/DS1644P 3 of 13 PACKAGES The DS1644 is available in two packages (28-pin DIP and 34-pin PowerCap module). The 28-pin DIP style module integrates the crystal, lithium energy source, and silicon all in one package. The 34-pin PowerCap Module Board is designed with contacts for connection to a separate PowerCap (DS9034PCX) that contains the crystal and battery. This design allows the PowerCap to be mounted on top of the DS1644P after the completion of the surface-mount process. Mounting the PowerCap after the surface mount process prevents damage to the crystal and battery due to the high temperatures required for solder reflow. The PowerCap is keyed to prevent reverse insertion. The PowerCap Module Board and PowerCap are ordered separately and shipped in separate containers. The part number for the PowerCap is DS9034PCX. CLOCK OPERATIONS—READING THE CLOCK While the double-buffered register structure reduces the chance of reading incorrect data, internal updates to the DS1644 clock registers should be halted before clock data is read to prevent reading of data in transition. However, halting the internal clock register updating process does not affect clock accuracy. Updating is halted when a 1 is written into the read bit, the 7th most significant bit in the control register. As long as a 1 remains in that position, updating is halted. After a halt is issued, the registers reflect the count, that is day, date, and time that was present at the moment the halt command was issued. However, the internal clock registers of the double-buffered system continue to update so that the clock accuracy is not affected by the access of data. All of the DS1644 registers are updated simultaneously after the clock status is reset. Updating is within a second after the read bit is written to 0. DS1644 BLOCK DIAGRAM Figure 1 DS1644 TRUTH TABLE Table 1 VCC CE OE WE MODE DQ POWER VIH X X DESELECT HIGH-Z STANDBY X X X DESELECT HIGH-Z STANDBY VIL X VIL WRITE DATA IN ACTIVE VIL VIL VIH READ DATA OUT ACTIVE 5V ± 10% VIL VIH VIH READ HIGH-Z ACTIVE <4.5V >VBAT X X X DESELECT HIGH-Z CMOS STANDBY <VBAT X X X DESELECT HIGH-Z DATA RETENTION MODE |
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