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ACTT16-800CTN датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали ACTT16-800CTN
подробное описание детали  isc Thyristors
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
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ACTT16-800CTN датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
ACTT16-800CTN
DESCRIPTION
·
With TO-220 packaging
·
High operating junction temperature
·
Very high commutation performancemaximized at each
gate sensitivity
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
High temperature, high power motor control
·
Solid state relays;heating and cooking appliances
·
Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
800
V
VRRM
Repetitive peak reverse voltage
800
V
IT(RMS)
RMS on-state current
@Tc=126℃
16
A
ITSM
Surge non-repetitive on-state current
50HZ
60HZ
140
150
A
PG(AV)
Average gate power dissipation ( over any 20 ms period )
0.5
W
Tj
Operating junction temperature
-40~150
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM Rated;
VD=VDRM Rated;
Tj=125℃
0.01
2
mA
IDRM
Repetitive peak off-state current
VTM
On-state voltage
IT=20A
1.5
V
IGT
Gate-trigger current
VD =12V;IT=0.1A;
Ⅰ
35
mA
Ⅱ
35
Ⅲ
35
VGT
Gate-trigger voltage
VD =12V;IT=0.1A;
1.0
V


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