2SA0921 datasheet(1/3 Pages) PANASONIC

номер детали	2SA0921

подробное описание детали	For high breakdown voltage low-noise amplification Complementary

PDF	3 Pages

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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Transistors

1

Publication date: January 2003

SJC00007BED

2SA0921 (2SA921)

Silicon PNP epitaxial planar type

For high breakdown voltage low-noise amplification

Complementary to 2SC1980

■ Features

• High collector-emitter voltage (Base open) V

CEO

• Low noise voltage NV

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

−120

V

Collector-emitter voltage (Base open)

VCEO

−120

V

Emitter-base voltage (Collector open)

VEBO

−5V

Collector current

IC

−20

mA

Peak collector current

ICP

−50

mA

Collector power dissipation

PC

250

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC

= −10 µA, I

E

= 0

−120

V

Collector-emitter voltage (Base open)

VCEO

IC = −1 mA, IB = 0

−120

V

Emitter-base voltage (Collector open)

VEBO

IE = −10 µA, IC = 0

−5V

Collector-base cutoff current (Emitter open)

ICBO

VCB

= −50 V, I

E

= 0

−100

nA

Collector-emitter cutoff current (Base open)

ICEO

VCE = −50 V, IB = 0

−1

µA

Forward current transfer ratio *

hFE

VCE = −5 V, IC = −2 mA

180

700



Collector-emitter saturation voltage

VCE(sat)

IC

= −20 mA, I

B

= −2 mA

− 0.6

V

Transition frequency

fT

VCB = −5 V, IE = 2 mA, f = 200 MHz

200

MHz

Noise voltage

NV

VCE = −40 V, IC = −1 mA, GV = 80 dB

150

mV

Rg = 100 kΩ, Function = FLAT

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

5.0±0.2

0.7±0.1

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

12 3

+0.6

–0.2

4.0±0.2

1: Emitter

2: Collector

3: Base

TO-92-B1 Package

Note) The part number in the parenthesis shows conventional part number.

Rank

R

S

T

hFE

180 to 360

260 to 520

360 to 700

Аналогичный номер детали - 2SA0921

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SA0900	71Kb / 3P	For low-frequency Power amplification Complementary
	2SA0914	69Kb / 3P	For audio system/pli drive
	2SA0963	80Kb / 4P	For low-frequency power amplification

More results

Аналогичное описание - 2SA0921

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SA921	37Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SB1220	36Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SB1463	36Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SB788	36Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SB792	37Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SD814	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
	2SD958	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)
	2SB0788	69Kb / 3P	For High Breakdown Voltage Low-noise Amplification
	2SB0792	71Kb / 3P	For High Breakdown Voltage Low-noise Amplification
	2SD0662	72Kb / 3P	For High Breakdown Voltage General Amplification

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