2SA900 datasheet(2/3 Pages) PANASONIC

номер детали	2SA900

подробное описание детали	For low-frequency Power amplification Complementary

PDF	3 Pages

Scroll/Zoom	100%

производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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2 / 3 page

2SA0900

SJD00004BED

VBE(sat)  IC

hFE  IC

fT  IE

PC  Ta

IC  VCE

VCE(sat)  IC

Cob  VCB

Safe operation area

160

120

(1)

(2)

(1) With a 100

× 100 × 2 mm

Al heat sink

(2) Without heat sink

Ambient temperature T

a (°C)

−1.2

−1.0

− 0.8

− 0.6

− 0.4

− 0.2

= 25°C

−4.5 mA

−4.0 mA

−3.5 mA

−3.0 mA

−2.5 mA

−2.0 mA

−1.5 mA

−1.0 mA

− 0.5 mA

= −5.0 mA

−6

−5

−4

−1

−3

−2

Collector-emitter voltage V

CE (V)

− 0.01

− 0.1

−1

− 0.01

− 0.1

−1

−10

IC / IB

= 20

°C

−25°C

= 100°C

Collector current I

C (A)

− 0.01

− 0.1

−1

− 0.01

− 0.1

−1

−10

IC / IB

= 20

°C

100

°C

= −25°C

Collector current I

C (A)

− 0.01

− 0.1

−1

100

1 000

VCE

= −2 V

°C

−25°C

= 100°C

Collector current I

C (A)

1 000

100

500

400

300

200

100

VCB

= −6 V

= 25°C

Emitter current I

E (mA)

−1

−10

−100

120

100

= 0

= 1 MHz

= 25°C

Collector-base voltage V

CB (V)

− 0.1

−1

−10

−100

− 0.001

− 0.01

− 0.1

−1

−10

ICP

= 10 ms

= 1 s

Single pulse

= 25°C

Collector-emitter voltage V

CE (V)

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