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STM8401 датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STM8401
подробное описание детали  Dual Enhancement Mode Field Effect Transistor(N and P Channel)
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8401 датащи(HTML) 4 Page - SamHop Microelectronics Corp.

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Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
VDS, Drain-to Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID, Drain Current(A)
4
5
10
8
6
4
2
0
0
1
2
3
4
5
6
VGS=10,9,8,7,6,5,4,3V
VGS=1.5V
-55 C
25 C
25
20
15
10
5
0
0.0
0.5
1
1.5
2
2.5
3
Tj=125 C
Tj( C)
2.2
1.8
1.4
1.0
0.6
0.4
0
-50
0
50
100
150
VGS=10V
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
Ciss
Coss
Crss
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS = 0V, Is =1.7A
N-Ch
0.78 1.2
-0.82 -1.2
VGS = 0V, Is =-1.7A
P-Ch
V
b
C
Notes
c.Guaranteed by design,not subject to production testing.
b.Pulse Test:PulseWidth 300μs,Duty Cycle 2%.
＜
＜
a.Surface Mounted on FR4 Board,t 10sec.
＜
N-Channel
-25
25
75
125
V GS =10V
ID=9A
S T M8401



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