25TTS08STRR datasheet(3/8 Pages) IRF

3 / 8 page

25TTS..S SAFE

IR Series

Bulletin I2117 rev. D 12/98

www.irf.com

Triggering

Max. peak Gate Power

8.0

PG(AV) Max. average Gate Power

2.0

+ IGM Max. paek positive Gate Current

1.5

- VGM Max. paek negative Gate Voltage

IGT

Max. required DC Gate Current

Anode supply = 6V, resistive load, TJ = - 10°C

to trigger

Anode supply = 6V, resistive load, TJ = 25°C

Anode supply = 6V, resistive load, TJ = 125°C

VGT Max. required DC Gate Voltage

2.5

Anode supply = 6V, resistive load, TJ = - 10°C

to trigger

2.0

Anode supply = 6V, resistive load, TJ = 25°C

1.0

Anode supply = 6V, resistive load, TJ = 125°C

VGD Max. DC Gate Voltage not to trigger

0.25

TJ = 125°C, VDRM = rated value

IGD

Max. DC Gate Current not to trigger

2.0

TJ = 125°C, VDRM = rated value

Parameters

25TTS..S Units

Conditions

Switching

Parameters

25TTS..S

Units

Conditions

tgt

Typical turn-on time

0.9

µs

TJ = 25°C

trr

Typical reverse recovery time

TJ = 125°C

Typical turn-off time

110

Max. Junction Temperature Range

- 40 to 125

°C

stg

Max. Storage Temperature Range

- 40 to 125

°C

SolderingTemperature

240

°C

for 10 seconds (1.6mm from case)

thJC Max. Thermal Resistance Junction

1.1

°C/W

DCoperation

to Case

thJA Typ. Thermal Resistance Junction

°C/W

to Ambient (PCB Mount)**

ApproximateWeight

2 (0.07)

g(oz.)

Case Style

D2 Pak (SMD-220)

Thermal-Mechanical Specifications

Parameters

25TTS..S Units

Conditions

**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W

For recommended footprint and soldering techniques refer to application note #AN-994

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