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LTC4413 датащи(PDF) 8 Page - Linear Technology |
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LTC4413 датащи(HTML) 8 Page - Linear Technology |
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8 / 12 page ![]() 8 LTC4413 4413f OPERATIO The LTC4413 is described with the aid of the Block Diagram (Figure 1). Operation begins when the power source at VINA or VINB rises above the undervoltage lockout (UVLO) voltage of 2.4V and either of the ENBA or ENBB control pins is low. If only the voltage at the VINA pin is present, the power source to the LTC4413 (VDD) will be supplied from the VINA pin. The amplifier (A) will pull a current proportional to the difference between VINA and VOUTA from the gate (VGATEA) of the internal PFET (PA), driving this gate voltage below VINA. This will turn on PA. As VOUTA is pulled up to a forward voltage drop (VFWD) of 20mV below VINA, the LTC4413 will regulate VGATEA to maintain the small forward voltage drop. The system is now in forward regulation and the load at VOUTA will be powered from the supply at VINA. As the load current varies, VGATEA will be controlled to maintain VFWD until the load current exceeds the transistor’s (PA) ability to deliver the current as VGATEA approaches GND. At this point the PFET will behave as a fixed resistor with resistance RON, whereby the forward voltage will increase slightly with increased load current. As the magnitude of IOUT increases further (such that ILOAD > IOC), the LTC4413 will fix the load current to the constant value IOC to protect the device. The characteristics for parameters RFWD, RON, VFWD and IOC are specified with the aid of Figure 2, illustrating the LTC4413 forward voltage drop versus that of a Schottky diode. If another supply is provided at VINB, the LTC4413 will likewise regulate the gate voltage on PB to maintain the output voltage VOUTB just below the input voltage VINB. If this alternate supply, VINB, exceeds the voltage at VINA, the LTC4413 will select this input voltage as the internal supply (VDD). This second ideal diode operates indepen- dently of the first ideal diode function. When an alternate power source is connected to the load at VOUTA (or VOUTB), the LTC4413 will sense the increased voltage at VOUTA and amplifier A will increase the voltage VGATEA, reducing the current through PA. When VOUTA is higher than VINA + VRTO, VGATEA will be pulled up to VDD, which will turn off PA. The internal power source for the LTC4413 (VDD) will then be diverted to source current from the VOUTA pin, only if VOUTA is larger than VINB (or VOUTB). The system is now in the reverse turn-off mode. Power to the load is being delivered from an alternate supply and only a small current is drawn from VINA to sense the potential at VINA. When the selected channel of the LTC4413 is in reverse turn-off mode or both channels are disabled, the STAT pin will sink 9µA of current (ISON) if connected. Channel selection is accomplished using the two ENB pins, ENBA and ENBB. When the ENBA input is asserted (high), PA will have its gate voltage pulled to VDD at a controlled rate, limiting the turn-off time to avoid voltage spiking at the input when being driven by an inductive source impedance. A 3µA pull-down current on the ENB pins will ensure a low level at these inputs if left floating. Overcurrent and Short-Circuit Protection During an overcurrent condition, the output voltage will droop as the load current exceeds the amount of current that the LTC4413 can supply. At the time when an over- current condition is first detected, the LTC4413 will take some time to detect this condition before reducing the current to IMAX. For short durations after the output is shorted, the current may exceed IMAX. The magnitude of this peak short-circuit current can be large, depending on the load current immediately before the short circuit Figure 2 FORWARD VOLTAGE (V) 0 0 IFWD IOC SLOPE 1/RON SLOPE 1/RFWD LTC4413 SCHOTTKY DIODE 4413 F02 |
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