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FMP76-01T датащи(PDF) 1 Page - IXYS Corporation

номер детали FMP76-01T
подробное описание детали  TrenchTM P & N-Channel Power MOSFET Common Drain Topology
PDF  4 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

FMP76-01T датащи(HTML) 1 Page - IXYS Corporation

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© 2008 IXYS CORPORATION, All rights reserved
TrenchTM P & N-Channel
Power MOSFET
Common Drain Topology
DS100037(09/08)
Symbol
Test Conditions
Characteristic Values
Min.
Typ.
Max.
C
P
Coupling capacitance between shorted
40
pF
pins and mounting tab in the case
d
S ,dA
pin - pin
1.7
mm
d
S ,dA
pin - backside metal
5.5
mm
Weight
9
g
FMP76-01T
Features
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low Q
G
Low Drain-to-Tab capacitance
Low package inductance
Advantages
Low gate drive requirement
High power density
Low drain to ground capacitance
Fast switching
Applications
DC and AC motor drives
Class AB audio amplifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
- 100
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
- 100
V
V
GSS
Continuous
± 20
V
V
GSM
Transient
± 30
V
I
D25
T
C = 25°C
- 54
A
I
DM
T
C = 25°C, pulse width limited by TJM
- 230
A
I
A
T
C = 25°C
- 38
A
E
AS
T
C = 25°C
1.0
J
P
D
T
C = 25°C
132
W
P - CHANNEL
Advance Technical Information
Symbol
Test Conditions
Maximum Ratings
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
V
ISOLD
50/60H
Z, RMS, t = 1min, leads-to-tab
2500
~V
T
L
1.6mm (0.062 in.) from case for 10s
300
°C
T
SOLD
Plastic body for 10s
260
°C
F
C
Mounting force
20..120 / 4.5..27
N/lb.
P CH.
N CH.
V
DSS
- 100V
100V
I
D25
- 54A
62A
R
DS(on)
24m
Ω
Ω
Ω
Ω
Ω
11m
Ω
Ω
Ω
Ω
Ω
t
rr(typ)
70ns
67ns
T2
3
5
4
1
2
T1
2
3
4
5
1
ISOPLUS i4-PakTM
1
5
Isolated Tab


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