LP2317DT2AG

20V P-Channel (D-S) MOSFET

Drain-Source Breakdown Voltage

(VGS = 0V, ID =-250uA)

Gate Threshold Voltage

(VDS =VGS , ID =-250μA )

Gate Leakage Current

(VDS =0V, VGS =±8V )

Zero Gate Voltage Drain Current

(VDS =-16V, VGS =0V )

On-State Drain Current (Note 3)

(VDS = -5 V, VGS = -4.5 V)

Drain-Source On-Resistance

(VGS = -4.5 V; ID = -7 A)

Drain-Source On-Resistance

(VGS = -2.5 V; ID = -5.6 A)

Diode Forward Voltage (Note 3)

(IS =-2.5 A, VGS =0V)

Forward Transconductance (Note 3)

(VDS = -15 V, ID = -7 A )

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = -10 V, RL

= 1.4 Ω,ID = -7

A,VGEN = -4.5 V,

RGEN = 6 Ω)

-

Note: 3. Pulse test: PW ≤300us ,duty cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

ID(on)

gfs

-12

-

-

A

-

8

-

S

-

126

-

-

113

-

nC

ns

pF

Coss

Crss

(VDS = -10 V,

VGS = -4.5 V,ID

= -7 A)

-

6

-

-

12

-

-

85

-

Dynamic (Note 4)

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

35

-

-

1435

-

(VDS = -15 V,

VGS = 0 V, f = 1

MHz)

-

30

-

-

4

-

-

6

-

VSD

Static

Unit

nA

µA

VGS(th)

-

V

V

Symbol

Min.

IDSS

-

Typ.

Max.

V

-1.3

-

-

-

-

-

-

-

-

mΩ

26

36

±100

-1

-20

-0.4

-

-

RDS(ON)

(Note 3)

-

-

V(BR)DSS

IGSS

Characteristic

Leshan Radio Company, LTD.

2/5

Rev.D Nov. 2018