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20100906a

MITB15WB1200TMH

IXYS reserves the right to change limits, test conditions and dimensions.

Output Inverter D1 - D6

Ratings

Symbol

Definitions

Conditions

min.

typ. max.

Unit

V

RRM

max. repetitve reverse voltage

T

1200

V

I

F25

I

F80

forward current

T

25°C

T

80°C

24

16

A

A

V

F

forward voltage

I

T

25°C

T

2.3

1.9

2.7

V

V

Q

rr

I

RM

t

rr

E

rec

reverse recovery charge

max. reverse recovery current

reverse recovery time

reverse recovery energy

V

di

T

I

2.3

19.6

330

0.68

µC

A

ns

mJ

R

thJC

R

thCH

thermal resistance junction to case

thermal resistance case to heatsink

(per diode)

0.55

1.6

K/W

K/W

Ouput Inverter T1 - T6

Ratings

Symbol

Definitions

Conditions

min.

typ. max.

Unit

V

CES

collector emitter voltage

T

1200

V

V

GES

V

GEM

max. DC gate voltage

max. transient collector gate voltage

continuous

transient

±20

±30

V

V

I

C25

I

C80

collector current

T

25°C

T

80°C

29

20

A

A

P

tot

total power dissipation

T

25°C

100

W

V

CE(sat)

collector emitter saturation voltage

I

T

25°C

T

1.7

2.0

2.2

V

V

V

GE(th)

gate emitter threshold voltage

I

T

25°C

5

5.5

6.5

V

I

CES

collector emitter leakage current

V

T

25°C

T

0.8

0.6

mA

mA

I

GES

gate emitter leakage current

V

150

nA

C

ies

input capacitance

V

1100

pF

Q

G(on)

total gate charge

V

92

nC

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

turn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

T

25°C

V

V

55

30

320

200

1.2

1.3

ns

ns

ns

ns

mJ

mJ

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

turn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

T

V

V

60

35

360

340

2

1.7

ns

ns

ns

ns

mJ

mJ

RBSOA

reverse bias safe operating area

V

T

V

V

I

SC

(SCSOA)

short circuit safe operating area

V

T

R

68

A

R

thJC

R

thCH

thermal resistance junction to case

thermal resistance case to heatsink

(per IGBT)

0.4

1.2

K/W

K/W

T