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MITB10WB1200TMH датащи(PDF) 2 Page - IXYS Corporation

номер детали MITB10WB1200TMH
подробное описание детали  Converter - Brake - Inverter Module Low Loss Trench IGBT
PDF  8 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

MITB10WB1200TMH датащи(HTML) 2 Page - IXYS Corporation

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© 2010 IXYS All rights reserved
2 - 8
20100906b
MITB10WB1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Output Inverter D1 - D6
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
RRM
max. repetitve reverse voltage
T
VJ = 150°C
1200
V
I
F25
I
F80
forward current
T
C =
25°C
T
C =
80°C
24
16
A
A
V
F
forward voltage
I
F = 10 A; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
2.0
1.6
2.4
V
V
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R = 600 V
di
F /dt = -300 A/µs
T
VJ = 125°C
I
F = 10 A; VGE = 0 V
1.9
12.8
335
0.54
µC
A
ns
mJ
R
thJC
R
thCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
0.55
1.6
K/W
K/W
Ouput Inverter T1 - T6
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
CES
collector emitter voltage
T
VJ = 150°C
1200
V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C =
25°C
T
C =
80°C
17
12
A
A
P
tot
total power dissipation
T
C =
25°C
70
W
V
CE(sat)
collector emitter saturation voltage
I
C = 10 A; VGE = 15 V
T
VJ =
25°C
T
VJ = 125°C
1.9
2.3
2.2
V
V
V
GE(th)
gate emitter threshold voltage
I
C = 0.3 A; VGE = VCE
T
VJ =
25°C
5
5.5
6.5
V
I
CES
collector emitter leakage current
V
CE = VCES; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
0.8
0.6
mA
mA
I
GES
gate emitter leakage current
V
GE = ±20 V
150
nA
C
ies
input capacitance
V
CE = 25 V; VGE = 0 V; f = 1 MHz
600
pF
Q
G(on)
total gate charge
V
CE = 600 V; VGE = 15 V; IC = 10 A
54
nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
T
VJ =
25°C
V
CE = 600 V; IC = 10 A
V
GE = ±15 V; RG = 100 W
55
30
320
200
0.9
0.75
ns
ns
ns
ns
mJ
mJ
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
T
VJ = 125°C
V
CE = 600 V; IC = 10 A
V
GE = ±15 V; RG = 100 W
60
35
360
340
1.55
1.1
ns
ns
ns
ns
mJ
mJ
RBSOA
reverse bias safe operating area
V
GE = ±15 V; RG = 100 W; IC = 20 A; TVJ = 125°C
V
CEK < VCES-LS·dI /dt
V
I
SC
(SCSOA)
short circuit safe operating area
V
CE = 720 V; VGE = ±15 V;
T
VJ = 125°C
R
G = 100 W; tp = 10 µs; non-repetitive
40
A
R
thJC
R
thCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
0.65
1.9
K/W
K/W
T
C = 25°C unless otherwise stated



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