IXYS reserves the right to change limits, test conditions, and dimensions.

IXGA9289

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

C

= 60 A V

60

85

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

5600

pF

C

oes

V

160

pF

C

res

38

pF

Q

g

134

nC

Q

ge

I

C

= 60 A, V

34

nC

Q

gc

29

nC

t

d(on)

33

n s

t

ri

43

n s

t

d(off)

73

n s

t

fi

24

n s

t

d(on)

32

n s

t

ri

72

n s

t

d(off)

84

n s

t

fi

40

n s

R

thJC

0.5

K/W

R

thCK

0.25

K/W

Resistive load, T

°°°°C

I

C

= 60 A, V

V

Resistive load, T

°°°°C

I

C

= 60 A, V

V

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

TO-263 AA Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029