поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

L8001L-R20-R датащи(PDF) 5 Page - Unisonic Technologies

номер детали L8001L-R20-R
подробное описание детали  FET BIAS CONTROLLER
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

L8001L-R20-R датащи(HTML) 5 Page - Unisonic Technologies

  L8001L-R20-R Datasheet HTML 1Page - Unisonic Technologies L8001L-R20-R Datasheet HTML 2Page - Unisonic Technologies L8001L-R20-R Datasheet HTML 3Page - Unisonic Technologies L8001L-R20-R Datasheet HTML 4Page - Unisonic Technologies L8001L-R20-R Datasheet HTML 5Page - Unisonic Technologies L8001L-R20-R Datasheet HTML 6Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 5 / 6 page
background image
L8001
Preliminary
CMOS IC
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
www.unisonic.com.tw
QW-R502-938.d
T Y PI CAL APPLI CAT I ON CI RCU I T
There are three major functions provided by L8001G: support negative voltage, bias control circuit, and FET
protesting circuit.
The negative voltage is generated using internal oscillator. It only needs an ac coupled capacitor CNB 47nF and a
negative voltage bypass capacitor CSUB 47nF.
The bias control circuit is used to establish a stable bias current for FETs.
It’s bias current can be adjusted by
external resistor Rcal.Rcal1 resistor is used to set ID1, ID2, ID3 in L8001G. Rcal2 resistor is used to set ID4, ID5, ID6 in
L8001G. if the same drain current is required for all FETs then pins Ical1 and Ical2 can be wired together and
shunted to ground by a single resistor of half normal value.
The L8001G devices have been designed to protect the external FETs from adverse operating conditions. With a
JFET connected to any bias circuit, the gate output voltage of the bias circuit can not exceed the range -2.5V to 0.7V,
under any conditions including powerup and powerdown transients. Should the negative bias generator be shorted
or overloaded so that the drain current of the external FETs can no longer be controlled, the drain supply to FETs is
shut down to avoid damage to the FETs by excessive drain current. The following diagrams show the L8001G in
typical LNB applications. Within each FET gain stage the numbering system indicates how the bias stages relate to
the application circuits. This is important when RCAL values are used to set differing drain currents.



Html Pages

1 2 3 4 5 6


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com