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IXTP55N075T датащи(PDF) 2 Page - IXYS Corporation |
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IXTP55N075T датащи(HTML) 2 Page - IXYS Corporation |
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2 / 5 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTP55N075T IXTY55N075T Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. g fs V DS= 10 V; ID = 0.5 ID25, Note 1 16 27 S C iss 1400 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 235 pF C rss 123 pF t d(on) 20 n s t r V GS = 10 V, VDS = 0.5 VDSS, ID = 10 A 50 n s t d(off) R G = 18 Ω (External) 44 n s t f 41 n s Q g(on) 33 nC Q gs V GS= 10 V, VDS = 0.5 VDSS, ID = 10 A 10 nC Q gd 9nC R thJC 1.15 °C/W R thCS TO-220 0.5 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values T J = 25°C unless otherwise specified) Min. Typ. Max. I S V GS = 0 V 55 A I SM Repetitive 150 A V SD I F = 25 A, VGS = 0 V, Note 1 1.2 V t rr I F = 25 A, -di/dt = 100 A/μs50 ns V R = 40 V, VGS = 0 V Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body. TO-252 (IXTY) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 1 Anode 2 NC 3 Anode 4 Cathode Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain TO-220 (IXTP) Outline PRELIMINARYTECHNICAL INFORMATION The product presented herein is under development. The Technical Specifica- tions offered are derived from data gathered during objective characteriza- tions of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478B2 7,071,537 |
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