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LM2746MXAX датащи(PDF) 4 Page - National Semiconductor (TI) |
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LM2746MXAX датащи(HTML) 4 Page - National Semiconductor (TI) |
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4 / 24 page ![]() Electrical Characteristics (Continued) V CC = 3.3V unless otherwise indicated. Limits in standard type are for TJ = 25˚C only; limits in boldface type apply over the junction temperature (T J) range of -40˚C to +125˚C. Minimum and Maximum limits are guaranteed through test, design, or sta- tistical correlation. Typical values represent the most likely parametric norm at T J = 25˚C, and are provided for reference pur- poses only. Symbol Parameter Conditions Min Typ Max Units GATE DRIVE I Q-BOOT BOOT Pin Quiescent Current V BOOT = 12V, VSD =0 18 90 µA R HG_UP High-Side MOSFET Driver Pull-Up ON resistance V BOOT =5V @ 350mA Sourcing 3 Ω R HG_DN High-Side MOSFET Driver Pull-Down ON resistance V BOOT =5V @ 350mA Sinking 2 Ω R LG_UP Low-Side MOSFET Driver Pull-Up ON resistance V BOOT =5V @ 350mA Sourcing 3 Ω R LG_DN Low-Side MOSFET Driver Pull-Down ON resistance V BOOT =5V @ 350mA Sinking 2 Ω OSCILLATOR f SW PWM Frequency R FADJ = 702.1 k Ω 50 kHz R FADJ = 98.74 k Ω 300 R FADJ = 45.74 k Ω 475 600 725 R FADJ = 24.91 k Ω 1000 D Max High-Side Duty Cycle f SW = 300kHz f SW = 600kHz f SW = 1MHz 80 76 73 % LOGIC INPUTS AND OUTPUTS V SD-IH SD Pin Logic High Trip Point V SD Rising 1.3 V V SD-IL SD Pin Logic Low Trip Point V SD Falling 0.8 V V PWGD-TH-LO PWGD Pin Trip Points FB Falling 0.408 0.434 0.457 V V PWGD-TH-HI PWGD Pin Trip Points FB Rising 0.677 0.710 0.742 V V PWGD-HYS PWGD Hysteresis FB Falling FB Rising 60 90 mV Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device operates correctly. Opearting Ratings do not imply guaranteed performance limits. Note 2: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin. www.national.com 4 |
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