IXTH10N100D2 datasheet(1/5 Pages) IXYS

номер детали	IXTH10N100D2

подробное описание детали	Depletion Mode MOSFET

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSX

T

J

= 25

C to 150C

1000

V

DGX

T

J

= 25

C to 150C, R

GS = 1M

1000

V

GSX

Continuous

20

V

GSM

Transient

30

V

P

D

T

C = 25C

695

W

T

J

- 55 ... +150

C

T

JM

150

C

T

stg

- 55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

DS100326A(4/17)

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSX

V

GS = - 5V, ID = 250A

1000

V

GS(off)

V

DS = 25V, ID = 1mA

- 2.5

- 4.5

V

I

GSX

V

GS = 20V, VDS = 0V

100 nA

I

DSX(off)

V

DS = VDSX, VGS = - 5V

10

A

T

J = 125C

250

A

R

DS(on)

V

GS = 0V, ID = 5A, Note 1

1.5



I

D(on)

V

GS = 0V, VDS = 25V, Note 1

10

A

Depletion Mode

MOSFET

N-Channel

IXTH10N100D2

IXTT10N100D2

V

DSX

=

1000V

I

D(on)

>

10A

R

DS(on) 



1.5



Features

• Normally ON Mode

•

 International Standard Packages

• Molding Epoxies Meet UL94V-0

Flammability Classification

Advantages

• Easy to Mount

• Space Savings

• High Power Density

Applications

• Audio Amplifiers

• Start-up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

TO-268 (IXTT)

G

S

D (Tab)

S

G

D (Tab)

D

Preliminary Technical Information

G

D

S

Аналогичный номер детали - IXTH10N100D2

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IXYS Corporation	IXTH10N100D	129Kb / 5P	N-Channel, Depletion Mode

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IXTH10N100D2 датащи(PDF) 1 Page - IXYS Corporation

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