IXFT80N08 datasheet(1/2 Pages) IXYS

номер детали	IXFT80N08

подробное описание детали	N-Channel Enhancement Mode Avalanche Rated, High dv/dt

PDF	2 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 2 page

98810A (5/01)

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C80

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

80

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C80

A

I

L(RMS)

Lead current limit

75

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

320

A

I

AR

T

C

= 25

°C80

A

E

AR

T

C

= 25

°C50

mJ

E

AS

2.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

300

W

T

J

-55 to +150

°C

T

JM

150

°C

T

stg

-55 to +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt

Preliminary data sheet

Features

l International standard packages

l Low R

DS (on)

l Rated for unclamped Inductive load

switching (UIS)

l Molding epoxies meet UL 94 V-0

flammability classification

Advantages

l Easy to mount

l Space savings

l High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 1 mA

80

V

GS(th)

V

DS

= V

GS, ID = 4 mA

2.0

4.0

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C50

µA

V

GS

= 0 V

T

J

= 125

°C1

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25

9m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

TO-247 AD (IXFH)

G = Gate

D

= Drain

S = Source TAB = Drain

HiPerFETTM

Power MOSFETs

TO-268 ( IXFT) Case Style

(TAB)

G

S

V

DSS

=80

V

I

D25

=80

A

R

DS(on)

=

9 m

Ω

t

rr ≤

≤≤≤≤ 200 ns

IXFH 80N08

IXFT 80N08

(TAB)

Аналогичный номер детали - IXFT80N08

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IXFT80N08	400Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXFT80N085	54Kb / 2P	HiPerFETTM Power MOSFETs

More results

Аналогичное описание - IXFT80N08

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BUZ100S	126Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
	BUZ102S	123Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
	BUZ110S	122Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
	BUZ111S	121Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
	BUZ111SL	120Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
IXYS Corporation	IXFN100N25	78Kb / 2P	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low
Infineon Technologies A...	SPP08P06P	843Kb / 10P	P-Channel Enhancement mode Avalanche rated dv/dt rated Rev 1.5 2009-04-14
IXYS Corporation	IXTH28N50Q	177Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXTQ24N55Q	517Kb / 2P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXFH36N55Q	171Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt

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Аналогичный номер детали - IXFT80N08

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