IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA80N12T2

IXTP80N12T2

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

36

60

S

C

iss

4740

pF

C

oss

V

415

pF

C

rss

66

pF

t

d(on)

21

ns

t

r

14

ns

t

d(off)

39

ns

t

f

28

ns

Q

g(on)

80

nC

Q

gs

V

23

nC

Q

gd

20

nC

R

thJC

0.46

C/W

R

thCH

TO-220

0.50

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

80

A

I

SM

Repetitive, Pulse Width Limited by T

JM

320

A

V

SD

I

1.3

V

t

rr

90

ns

I

RM

4

A

Q

RM

180

nC

2. On through-hole packages, R

location must be 5mm or less from the package body.

Resistive Switching Times

V

R

I

-di/dt = 100A/

s

V

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Pins: 1 - Gate

2 - Drain

3 - Source

TO-220 Outline

TO-263 Outline

Pins:

1 - Gate

2,4 - Drain

3 - Source