IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTP340N04T4

IXTH340N04T4

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

110

180

S

C

iss

13

nF

C

oss

V

1850

pF

C

rss

1226

pF

R

Gi

Gate Input Resistance

1.1



t

d(on)

23

ns

t

r

55

ns

t

d(off)

113

ns

t

f

40

ns

Q

g(on)

256

nC

Q

gs

V

64

nC

Q

gd

86

nC

R

thJC

0.31

C/W

R

thCS

TO-220

0.50

C/W

TO-247

0.21

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

340

A

I

SM

Repetitive, Pulse Width Limited by T

JM

1360

A

V

SD

I

1.4

V

t

rr

43

ns

I

RM

10

A

Q

RM

210

nC

2. On through-hole packages, R

or less from the package body.

Resistive Switching Times

V

R

I

-di/dt = 100A/

s,

V

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.