TIL3020 THRU TIL3023

OPTOCOUPLERS/OPTOISOLATORS

SOES028 – DECEMBER 1987 – REVISED OCTOBER 1995

7–2

POST OFFICE BOX 655303

electrical characteristics 25

°C free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IR

Static reverse current

VR = 3 V

0.05

100

µA

VF

static forward voltage

IF = 10 mA

1.2

1.5

V

IDRM

Repetitive off-state current, either direction

VDRM = 250 V,

See Note 5

10

100

nA

dv/dt

Critical rate of rise of off-state voltage

See Figure 1

100

V/

µs

dv/dt(c)

Critical rate of rise of communication voltage

IO = 15 mA,

See Figure 1

0.15

V/

µs

TIL3020

15

30

IFT

Input trigger current either direction

TIL3021

Output supply voltage=3V

8

15

mA

IFT

Input trigger current, either direction

TIL3022

Output supply voltage = 3 V

5

10

mA

TIL3023

3

5

VTM

Peak on-state voltage, either direction

ITM = 100 mA

1.4

3

V

IH

Holding current, either direction

100

µA

NOTE 5: Test voltage must be applied at a rate no higher than 12 V/

µs.

PARAMETER MEASUREMENT INFORMATION

NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input of 0 volts. The frequency of Vin is increased until

the phototriac turns on. This frequency is then used to calculate the dv/dt according to the following formula:

The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and

increasing the frequency of Vin until the phototriac remains on (latches) after the input pulse has ceased. With no further input

pulses., the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs

can then be used to calculate the dv/dt(c) according to the formula shown above.

dv dt

+ 2 2 pfV

in

1

2

4

6

RL

Vin = 30 V rms

10 k

Ω

VCC

Input

(see Note A)

2N3904

Figure 1. Critical Rate of Rise Test Circuit