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OM6516SC датащи(PDF) 2 Page - List of Unclassifed Manufacturers

номер детали OM6516SC
подробное описание детали  1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package
PDF  2 Pages
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производитель  ETC [List of Unclassifed Manufacturers]
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OM6516SC датащи(HTML) 2 Page - List of Unclassifed Manufacturers

  OM6516SC Datasheet HTML 1Page - List of Unclassifed Manufacturers OM6516SC Datasheet HTML 2Page - List of Unclassifed Manufacturers  
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PRELIMINARY DATA: OM6516SC
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
V
(BR)CES Collector Emitter
1000
V
V
CE = 0
Breakdown Voltage
I
C = 250 µA
I
CES
Zero Gate Voltage
0.25
mA
V
CE = Max. Rat., VGE = 0
Drain Current
1.0
mA
V
CE = 0.8 Max. Rat., VGE = 0
T
C = 125°C
I
GES
Gate Emitter Leakage
±100
nA
V
GE = ±20 V
Current
V
CE = 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
4.5
6.5
V
V
CE = VGE, IC = 1 mA
V
CE(sat)
Collector Emitter
3.0
V
V
GE = 15 V, IC = 15 A
Saturation Voltage
T
C = 25°C
V
CE(sat)
Collector Emitter
4.0
4.5
V
V
GE = 15 V, IC = 15 A
Saturation Voltage
T
C = 125°C
Dynamic
g
fs
Forward Transductance
5.5
S
V
CE = 20 V, IC = 15 A
C
ies
Input Capacitance
2000
pF
V
GE = 0
C
oes
Output Capacitance
160
pF
V
CE = 25 V
C
res
Reverse Transfer Capacitance
65
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
50
nS
V
CC = 600 V, IC = 15 A
t
r
Rise Time
200
nS
V
GE = 15 V, Rg = 3.3 ,
T
d(off)
Turn-Off Delay Time
200
nS
T
j = 125°C
t
f
Fall Time
300
nS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
200
nS
V
CEclamp = 600 V, IC = 15 A
t
f
Fall Time
200
nS
V
GE = 15 V, Rg = 3.3
E
off
Turn-Off Losses
1.5
mWs L = 1 mH, T
j = 125°C
PRELIMINARY DATA: OM6520SC
IGBT CHARACTERISTICS
Parameter - OFF (see Note 1)
Min. Typ. Max. Units Test Conditions
V
(BR)CES Collector Emitter
1000
V
V
CE = 0
Breakdown Voltage
I
C = 250 µA
I
CES
Zero Gate Voltage
0.25
mA
V
CE = Max. Rat., VGE = 0
Drain Current
1.0
mA
V
CE = 0.8 Max. Rat., VGE = 0
T
C = 125°C
I
GES
Gate Emitter Leakage
±100
nA
V
GE = ±20 V
Current
V
CE = 0 V
Parameter - ON
V
GE(th)
Gate Threshold Voltage
4.5
6.5
V
V
CE = VGE, IC = 1 mA
V
CE(sat)
Collector Emitter
3.0
V
V
GE = 15 V, IC = 15 A
Saturation Voltage
T
C = 25°C
V
CE(sat)
Collector Emitter
4.0
4.5
V
V
GE = 15 V, IC = 15 A
Saturation Voltage
T
C = 125°C
Dynamic
g
fs
Forward Transductance
5.5
S
V
CE = 20 V, IC = 15 A
C
ies
Input Capacitance
2000
pF
V
GE = 0
C
oes
Output Capacitance
160
pF
V
CE = 25 V
C
res
Reverse Transfer Capacitance
65
pF
f = 1 mHz
Switching-Resistive Load
T
d(on)
Turn-On Time
50
nS
V
CC = 600 V, IC = 15 A
t
r
Rise Time
200
nS
V
GE = 15 V, Rg = 3.3 ,
T
d(off)
Turn-Off Delay Time
200
nS
T
j = 125°C
t
f
Fall Time
300
nS
Switching-Inductive Load
T
d(off)
Turn-Off Delay Time
200
nS
V
CEclamp = 600 V, IC = 15 A
t
f
Fall Time
200
nS
V
GE = 15 V, Rg = 3.3
E
off
Turn-Off Losses
1.5
mWs L = 1 mH, T
j = 125°C
DIODE CHARACTERISTICS
V
f
Maximum Forward Voltage
1.85
V
I
F = 30 A, TC = 25°C
1.70
V
I
F = 30 A, TC = 150°C
I
r
Maximum Reverse Current
500
µA
V
R = 1000 V, TC = 25°C
7.0
mA
V
R = 800 V, TC = 125°C
t
rr
Reverse Recovery Time
50
nS
I
F = 1 A, di / dt = -15 A µ/S
V
R = 30 V, Tj = 25°C
Note 1: Limited by diode I
r characteristic.



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