IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA80N075L2

IXTP80N075L2

IXTH80N075L2

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

80

A

I

SM

Repetitive, Pulse Width Limited by T

JM

320

A

V

SD

I

1.4

V

t

rr

160

ns

I

RM

14

A

Q

RM

1.3

μC

I

V

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

24

30

36

S

C

iss

3600

pF

C

oss

V

935

pF

C

rss

325

pF

R

Gi

Integrated Gate Input Resistor

1.2



t

d(on)

15

ns

t

r

35

ns

t

d(off)

40

ns

t

f

12

ns

Q

g(on)

103

nC

Q

gs

V

14

nC

Q

gd

48

nC

R

thJC

0.35

C/W

R

thCS

TO-220

0.50

C/W

TO-247

0.21

C/W

Safe Operating Area Specification

Characteristic Values

Symbol

Test Conditions

Min.

Typ.

Max.

SOA

V

214

W

Resistive Switching Times

V

R