IXYS reserves the right to change limits, test conditions, and dimensions.

IXTT40N50L2

IXTQ40N50L2

IXTH40N50L2

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

11

15

19

S

C

iss

10.4

nF

C

oss

V

655

pF

C

rss

155

pF

t

d(on)

50

ns

t

r

133

ns

t

d(off)

127

ns

t

f

44

ns

Q

g(on)

320

nC

Q

gs

V

64

nC

Q

gd

198

nC

R

thJC

0.23

C/W

R

thCS

(TO-247&TO-3P)

0.25

C/W

Safe Operating Area Specification

Symbol

Test Conditions

Min.

Typ.

Max.

SOA

V

320

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

40

A

I

SM

Repetitive, Pulse Width Limited by T

JM

160

A

V

SD

I

1.5

V

t

rr

I

500

ns

Note 1: Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times

V

R