ACE14201B datasheet(1/6 Pages) ACE

номер детали	ACE14201B

подробное описание детали	P-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE14201B

P-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

The ACE14201B uses advanced trench technology and desgin to provide excellent RDS(ON) with low

gate charge. It can be used in a wide variety of applications.

Features



VDS (V) =-20V , ID = -45A



RDS(ON) @VGS = -4.5V , TYP 5.8m

Ω



RDS(ON) @VGS = -2.5V , TYP 7.2m

Ω



RDS(ON) @VGS = -1.8V , TYP 9m

Ω

Absolute Maximum Ratings @T

A=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)*AC

TA=25℃

ID

-45

A

TA=100℃

-35

Drain Current (Pulsed)*B

IDM

-200

A

Power Dissipation

TA=25℃

PD

80

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJAis measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

DFN3*3-8L

Аналогичный номер детали - ACE14201B

производитель	номер детали	датащи	подробное описание детали
ACE Technology Co., LTD...	ACE14201T	522Kb / 6P	P-Channel Enhancement Mode Power MOSFET VER 1.1

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