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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PAM8303CBSC датащи(PDF) 4 Page - Diodes Incorporated |
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PAM8303CBSC датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 16 page  PAM8303C Document number: DS36438 Rev.2 - 2 4 of 16 www.diodes.com May 2018 © Diodes Incorporated PAM8303C Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 2V/V, RL = L(33µH) + R + L(33µH), unless otherwise specified.) Symbol Parameter Test Conditions Min Typ Max Units VDD Supply Voltage 2.8 5.5 V PO Output Power THD+N = 10%, f = 1kHz, R = 4Ω VDD = 5.0V 2.85 3.00 — W VDD = 3.6V 1.65 1.80 — VDD = 3.2V 1.20 1.35 — THD+N = 1%, f = 1kHz, R = 4Ω VDD = 5.0V 2.50 2.66 — W VDD = 3.6V 1.15 1.30 — VDD = 3.2V 0.85 1.0 — THD+N = 10%, f = 1kHz, R = 8Ω VDD = 5.0V 1.65 1.8 — W VDD = 3.6V 0.75 0.9 — VDD = 3.2V 0.55 0.7 — THD+N = 1%, f = 1kHz, R = 8Ω VDD = 5.0V 1.3 1.5 — W VDD = 3.6V 0.55 0.72 — VDD = 3.2V 0.40 0.55 — THD+N Total Harmonic Distortion Plus Noise VDD = 5.0V, PO = 1W, R = 8Ω f = 1kHz — 0.28 0.35 % VDD = 3.6V, PO = 0.1W, R = 8Ω — 0.40 0.45 VDD = 3.2V, PO = 0.1W, R = 8Ω — 0.55 0.60 VDD = 5.0V, PO = 0.5W, R = 4Ω f = 1kHz — 0.20 0.25 % VDD = 3.6V, PO = 0.2W, R = 4Ω — 0.35 0.40 VDD = 3.2V, PO = 0.1W, R = 4Ω — 0.5 0.55 PSRR Power Supply Ripple Rejection VDD = 3.6V, Inputs AC-Grounded with CIN = 1µF f = 217Hz — -63 -55 dB f = 1kHz — -62 -55 f = 10kHz — -52 -40 Dyn Dynamic Range VDD = 5V, THD = 1%, R = 8Ω f = 1kHz 85 95 — VN Output Noise Inputs AC-Grounded No A-Weighting — 50 100 µV A-Weighting — 30 60 CMRR Common-Mode Rejection Ratio VIC = 100m, VPP, f =1kHz 40 63 — dB η Peak Efficiency RL = 8Ω, THD = 10% f = 1kHz 85 90 — % RL = 4Ω, THD = 10% 80 86 — IQ Quiescent Current VDD = 5.0V R = 8Ω — 7.5 10 mA VDD = 3.6V — 4.6 7 VDD = 3.0V — 3.6 5 ISD Shutdown Current VDD = 3.0V to 5.0V VSD = 0.3V — 0.5 2 µA RDS(ON) Static Drain-to-Source On-State Resistor CSP Package, High Side PMOS plus Low Side NMOS, I = 500mA VDD = 5.0V — 280 350 — VDD = 3.6V — 300 375 — VDD = 3.0V — 325 400 — MSOP/DFN package, High-Side PMOS plus Low-Side NMOS, I = 500mA VDD = 5.0V — 365 420 — VDD = 3.6V — 385 450 — VDD = 3.0V — 410 500 — RIN Input Resistance — — 150 — kΩ fSW Switching Frequency VDD = 3V to 5V 200 250 300 kHz GV Closed Loop Gain VDD = 3V to 5V — 300 kΩ/RI — dB VOS Output Offset Voltage Input AC-Ground, VDD = 5V — 10 50 mV VIH Enable Input High Voltage VDD = 5V 1.5 — — V VIL Enable Input Low Voltage VDD = 5V — — 0.3 V |
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