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PAM8006ATR датащи(PDF) 4 Page - Diodes Incorporated |
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PAM8006ATR датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 13 page ![]() PAM8006A Document number: DSxxxxx Rev. 1 - 0 4 of 13 www.diodes.com April 2013 © Diodes Incorporated PAM8006A A Product Line of Diodes Incorporated Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Parameter Rating Unit Supply Voltage VCC 8 to 18 V Input Pin Voltage 0 to 5.5 V High Level Input Voltage: SD 2.0 to VCC V MUTE 2.0 to 5.5 V Low Level Input Voltage: SD 0 to 0.3 V MUTE 0 to 0.3 V Ambient Operating Temperature -20 to +85 °C Thermal Information Parameter Package Symbol Maximum Unit Thermal Resisitance (Junction to Case) QFN5x5-32L θJC 5.0 °C/W Thermal Resistance (Junction to Ambient) QFN5x5-32L θJA 16.1 The exposed PAD must be soldered to a thermal land on the PCB. Electrical Characteristics (@TA = +25°C, VCC = 12V, RL =8Ω, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Units PO Continuous Output Power THD+N = 0.12%, f = 1kHz, RL = 8Ω 6 W THD+N = 1%, f = 1kHz, RL = 8Ω 8.5 THD+N = 10%, f = 1kHz, RL = 8Ω 10 IDD Quiescent Current (No Load) 16.5 25 mA ISD Supply Quiescent Current in Shutdown Mode Shutdown = 0V 4 10 µA RDS(ON) Drain-Source On-State Resisitance IO = 0.5A TJ = +25°C High Side 210 mΩ Low Side 210 Total 420 PSRR Power Supply Ripple Rejection Ratio 1VPP Ripple, f = 1kHz, Inputs AC-Coupled to Ground -65 dB fOSC Oscillator frequency 300 kHz Vn Output Integrated Noise Floor 20Hz to 22kHz, A-Weighting -100 dB CS Crosstalk PO = 3W, RL = 8Ω, f = 1kHz -95 dB SNR Signal to Noise Ratio Maximum Output at THD+N < 0.5%, f = 1kHz 90 dB Gain 32 dB |VOS| Output Offset Voltage (measured differentially) INN and INP Connected Together 30 mV V2P5 2.5V Bias Voltage No Load 2.5 V AVDD Internal Analog Supply Voltage VCC = 8V to 26V 5 5.5 V OTS Over Temperature Shutdown 160 °C OTH Thermal Hysteresis 50 °C |
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