CMBT5551 datasheet(2/3 Pages) CDIL

номер детали	CMBT5551

подробное описание детали	SILICON NPN HIGH-VOLTAGE TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

производитель	CDIL [Continental Device India Limited]

домашняя страница	http://www.cdilsemi.com

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2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Collector current

max.

600 mA

Total power dissipation up to Tamb = 25 °C

Ptot

max

250 mW

Junction temperature

max.

150 ° C

Storage temperature range

Tstg

–55 to +150 ° C

THERMAL RESISTANCE

from junction to ambient

Rth j–a

500 K/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector cut–off current

IE = 0; VCB = 120 V

ICBO

max.

50 nA

IE = 0; VCB = 120 V; Tamb = 100 °C

ICBO

max.

µA

Emitter cut–off current

IC = 0; VEB = 4 V

IEBO

max.

50 nA

Breakdown voltages

IC = 1 mA; IB = 0

V(BR)CEO min.

160 V

IC = 100 µA; IE = 0

V(BR)CBO min.

180 V

IC = 0; IE = 10 µAV(BR)EBO

min.

6 V

Saturation voltages

IC = 10 mA; IB = 1 mA

VCEsat

max.

0.15 V

VBEsat

max.

1 V

IC = 50 mA; IB = 5 mA

VCEsat

max.

0.2 V

VBEsat

max.

1 V

D.C. current gain

IC = 1 mA; VCE = 5 V

hFE

min.

IC = 10 mA; VCE = 5 V

hFE

max.

250

IC = 50 mA; VCE = 5 V

hFE

min.

Small–signal current gain

min.

IC = 1 mA; VCE = 10 V; f = 1 kHz

hfe

max.

200

Output capacitance at f = 1 MHz

IE = 0; VCB = 10 V

max.

6 pF

Input capacitance at f = 1 MHz

IC = 0; VEB = 0.5 V

max.

30 pF

Transition frequency at f = 100 MHz

min.

100 MHz

IC = 10 mA; VCE = 10 V

max.

300 MHz

CMBT5551

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