CSR2930800BA datasheet(2/50 Pages) ETC

номер детали	CSR2930800BA

подробное описание детали	FLASH MEMORY CMOS 8M (1M x 8/512K x 16) BIT

PDF	50 Pages

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производитель	ETC [List of Unclassifed Manufacturers]

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CSR2930800BA-90

A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)

The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The CSR2930800BA are erased when shipped from the factory.

The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low VCC detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,

by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been

completed, the devices internally reset to the read mode.

The CSR2930800BA memories electrically erase the entire chip or all bits within a sector simultaneously via

Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM

programming mechanism of hot electron injection.

s PACKAGES

48-pin Plastic TSOP (I)

48-pin Plastic FBGA

48-pin Plastic SCSP

(FPT-48P-M19)

(BGA-48P-M12)

(WLP-48P-M03)

Marking Side

(WLP-48P-M03)

CSR2930800BA датащи(PDF) 2 Page - List of Unclassifed Manufacturers