USR5VA10G-S08-R datasheet(4/5 Pages) UTC

4 / 5 page

USR5VA10

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R115-029.b



DETAILED DESCRIPTION

Self-Power Supply Circuit

There is self-power supply circuit with inside the IC, which can drive the IC and MOS without external power

supply.

Start Up

With K pole voltage is higher than A pole, self-power supply circuit will support the power of VCC, VCC voltage

increases. If VCC voltage is lower than start up voltage VCC_ON, internal Power MOS is off. When VCC voltage is higher

than VCC_ON, startup mode is finished. When VCC voltage is lower than VCC_UVLO, IC returns to startup mode.

Power MOS Control

If the detected voltage of (K-A) lower than Von, Power MOS will be open. If the detected voltage of (K-A) is higher

than VTHOFF, Power MOS will be closed.

RC Absorbing Circuit

In status of starting up, output short circuit, over input voltage and CCM modes, there will be peak voltage, as to

avoid the breaking of MOS, can add RC absorbing circuit between A and K, so that the peak voltage on N can be

reduced.

On-Resistance

During operation, internal resistance increases together with the temperature, efficiency decreases accordingly. It is

better to enlarge the heat releasing area so that the IC temperature can be decreased.

USR5VA10G-S08-R датащи(PDF) 4 Page - Unisonic Technologies