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MDF10N60GTH датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали MDF10N60GTH
подробное описание детали  isc N-Channel MOSFET Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MDF10N60GTH датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
MDF10N60GTH
·
FEATURES
·
With TO-220 packaging
·
Low switching loss
·
Ultra low gate charge
·
Easy to use
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·
APPLICATIONS
·
Switching applications
·
AC-DC converters
·
LED lighting
·
Uninterruptible power supply
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous @Tc=25℃
Tc=100℃
10
6.3
A
IDM
Drain Current-Single Pulsed
40
A
PD
Total Dissipation
156
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.8
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
62.5
℃
/W


Аналогичный номер детали - MDF10N60GTH

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