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BU323Z датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали BU323Z
подробное описание детали  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU323Z датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
BU323Z
DESCRIPTION
·
With TO-220 packaging
·
Very high DC current gain
·
Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
AC-DC motor control
·
Electronic ignition
·
Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
3
A
PC
Collector Power Dissipation
150
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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