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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AOTF292L датащи(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOTF292L датащи(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  AOT292L/AOB292L/AOTF292L General Description Product Summary VDS ID (at VGS=10V) 105A RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.1m Ω∗) RDS(ON) (at VGS=6V) < 5.3mΩ (< 4.9m Ω∗) Applications 100% UIS Tested 100% Rg Tested AOT292L TO-220 Tube 1000 AOTF292L TO-220F Tube 1000 100V N-Channel AlphaSGT TM • Trench Power AlphaSGT TM technology • Low RDS(ON) • RoHS and Halogen Free Compliant Orderable Part Number Package Type Form Minimum Order Quantity 100V • Synchronous Rectification for power supply • Ideal for boost converters G D S TO-263 G D S G D S D S G Top View TO-220F TO-220 AOTF292L AOT292L AOB292L Symbol VDS VGS IDM IAS Avalanche energy L=0.1mH C EAS VDS Spike VSPIKE TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC * Surface mount package TO263 ** Package limited for TO220 & TO263 23 TC=25°C Avalanche Current C W V A 60 mJ 180 150 ID A 420 TA=25°C TA=70°C TC=25°C TC=100°C Continuous Drain Current PDSM W TA=25°C Power Dissipation A 2.1 1.3 300 47 A Absolute Maximum Ratings TA=25°C unless otherwise noted ±20 V Units 105 70 14.5 11.5 °C/W RθJA 15 60 AOB292L TO-263 Tape & Reel 800 IDSM 82 50 AOT(B)292L AOTF292L Thermal Characteristics Parameter AOTF292L TA=70°C °C Units Junction and Storage Temperature Range -55 to 175 AOT(B)292L Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 0.5 3.2 Power Dissipation B TC=100°C 10µs PD 100 120 Gate-Source Voltage Pulsed Drain Current C Parameter Drain-Source Voltage Continuous Drain Current G** V Maximum Junction-to-Ambient A Rev.2.0: March 2016 www.aosmd.com Page 1 of 7 |
Аналогичный номер детали - AOTF292L |
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Аналогичное описание - AOTF292L |
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