STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N

2/12

Table 3: Absolute Maximum ratings

(*) Limited only by maximum temperature allowed

(1) Pulse width limited by safe operating area

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Table 6: On /Off

(2) Characteristic value at turn off on inductive load

Symbol

Parameter

Value

Unit

TO-220/I²PAK

TO-247/D²PAK

TO-220FP

600

V

V

Gate- source Voltage

± 25

V

20

20 (*)

A

12.8

12.8 (*)

A

Drain Current (pulsed)

80

80 (*)

A

160

40

W

Derating Factor

1.28

0.32

W/°C

dv/dt (2)

Peak Diode Recovery voltage slope

TBD

V/ns

Storage Temperature

– 55 to 150

°C

Max. Operating Junction Temperature

150

°C

TO-220/I²PAK

TO-247/D²PAK

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

0.78

3.1

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

TBD

A

Single Pulse Avalanche Energy

TBD

mJ

Symbol

Parameter

Test Conditions

Value

Unit

Min.

Typ.

Max.

Drain-source Breakdown

Voltage

600

V

dv/dt(2)

Drain Source Voltage

Slope

Vdd=TBD, Id=TBD, Vgs=TBD

TBD

V/ns

Zero Gate Voltage

1

10

µA

µA

Gate-body Leakage

100

nA

Gate Threshold Voltage

2

3

4V

Static Drain-source On

Resistance

0.140

0.170

Ω