IXTH110N10L2 datasheet(1/5 Pages) IXYS

номер детали	IXTH110N10L2

подробное описание детали	N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated

PDF	5 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

100

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

100

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

110

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

300

A

I

A

T

C = 25°C

110

A

E

AS

T

C = 25°C

3

J

P

D

T

C = 25°C

600

W

T

J

-55 to +150

°C

T

JM

+150

°C

T

stg

-55 to +150

°C

T

L

1.6mm (0.063in) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-247

6.0

g

TO-268

4.0

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

100

V

GS(th)

V

DS = VGS, ID = 250μA

2.5

4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

5

μA

T

J

= 125

°C

50

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

18 m

Ω

LinearL2TM Power

MOSFET w/ Extended

FBSOA

IXTH110N10L2

IXTT110N10L2

DS100235(01/10)

V

DSS

= 100V

I

D25

= 110A

R

DS(on)

≤≤≤≤≤ 18mΩ

Ω

Advance Technical Information

N-Channel Enhancement Mode

Guaranteed FBSOA

Avalanche Rated

Features

Designed for Linear Operation

International Standard Packages

Avalanche Rated

Integrated Gate Resistor for Easy

Paralleling

Guaranteed FBSOA at 75

°C

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

Solid State Circuit Breakers

Soft Start Controls

Linear Amplifiers

Programmable Loads

Current Regulators

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

TO-268 (IXTT)

G

S

D (Tab)

S

G

D (Tab)

D

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