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25TTS12FP датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 25TTS12FP
подробное описание детали  isc Thyristors
PDF  1 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

25TTS12FP датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

  25TTS12FP Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
25TTS12FP
APPLICATIONS
·
It is suitable to fit all modes of control found in applications
such as overvoltage crowbar protection,motor control circuits
in power tools and kitchen aids,in-rush current limiting circuits,
. capacitive discharge ignition, voltage regulation circuits etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
1200
V
VRRM
Repetitive peak reverse voltage
1200
V
IT(AV)
Average on-stage current
16
A
IT(RMS)
RMS on-state current
25
A
ITSM
Surge non-repetitive on-state current
TP=10ms
300
A
PG(AV)
Average gate power dissipation
over any 20 ms period
2.0
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VRM=VRRM
Tj=25℃
0.5
mA
Tj=125℃
10
mA
IDRM
Repetitive peak off-state current
VDM=VDRM
Tj=25℃
0.5
mA
Tj=125℃
10
mA
VTM
On-state voltage
ITM= 16A
1.25
V
IGT
Gate-trigger current
VD = 6 V;resistive load
45
mA
VGT
Gate-trigger voltage
VD = 6 V;resistive load
2
V
Rth(j-c)
Thermal resistance
Junction to case
1.5
℃
/W


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