2SC536 datasheet(1/1 Pages) ETC

номер детали	2SC536

подробное описание детали	TRANSISTOR (NPN)

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2SC536 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

400 mW (Tamb=25

℃)

Collector current

ICM:

100 mA

Collector-base voltage

V(BR)CBO:

40 V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100µA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=1mA, IB=0

30

V

Emitter-Base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=35V, IE=0

1

µA

Emitter cut-off current

IEBO

VEB=4V, IC=0

1

µA

DC current gain

hFE

VCE=6V, IC=1mA

60

960

Collector-emitter saturation voltage

VCE(sat)

IC=50mA, IB=5mA

0.5

V

Transition frequency

fT

VCE=6V, IC=1mA

100

MHz

Collector output capacitance

Cob

VCE=6V, f=1MHz

3.5

pF

CLASSIFICATION OF hFE

Rank

D

E

F

G

H

Range

60-120

100-200

160-320

280-560

480-960

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

2SC536

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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