IXTT76P10THV datasheet(1/7 Pages) IXYS

номер детали	IXTT76P10THV

подробное описание детали	P-Channel Enhancement Mode Avalanche Rated

PDF	7 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 7 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

- 100

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

- 100

V

GSS

Continuous

15

V

GSM

Transient

25

V

I

D25

T

C = 25C

- 76

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

- 230

A

I

A

T

C = 25C

- 38

A

E

AS

T

C = 25C1

J

P

D

T

C = 25C

298

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque (TO-220 & TO-247)

1.13 /10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-268HV

4.0

g

TO-247

6.0

g

DS100024C(9/15)

TrenchPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTT76P10THV

IXTA76P10T

IXTP76P10T

IXTH76P10T

V

DSS

= - 100V

I

D25

= - 76A

R

DS(on) 



25m



Features

 International Standard Packages

 Avalanche Rated

 Extended FBSOA

 Fast Intrinsic Diode

 Low R

DS(ON) and QG

Advantages

 Easy to Mount

 Space Savings

Applications

 High-Side Switching

 Push Pull Amplifiers

 DC Choppers

 Automatic Test Equipment

 Current Regulators

 Battery Charger Applications

D

S

G

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-268HV

(IXTT)

G

D (Tab)

S

TO-263 AA

(IXTA)

G

S

D (Tab)

G

D S

TO-220AB

(IXTP)

D (Tab)

TO-247

(IXTH)

G

S

D

D (Tab)

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250A

-100

V

GS(th)

V

DS = VGS, ID = - 250A

- 2.0

- 4.0

V

I

GSS

V

GS = 15V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

- 15

A

T

J = 125C

- 750

A

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

25 m



Аналогичный номер детали - IXTT76P10THV

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXTT74N20P	175Kb / 5P	PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
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Аналогичное описание - IXTT76P10THV

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IXTT76P10THV датащи(PDF) 1 Page - IXYS Corporation

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Аналогичный номер детали - IXTT76P10THV

Аналогичное описание - IXTT76P10THV

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