IXTH2N170D2 datasheet(4/5 Pages) IXYS

номер детали	IXTH2N170D2

подробное описание детали	Depletion Mode MOSFET

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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4 / 5 page

IXTT2N170D2

IXTH2N170D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 8. Normalized RDS(on) vs. Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50

-25

100

125

150

TJ - Degrees Centigrade

VGS = 0V

I D = 1A

Fig. 9. RDS(on) Normalized to ID = 1A Value

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.5

1.5

2.5

3.5

ID - Amperes

VGS = 0V

TJ = 125

TJ = 25

Fig. 10. Input Admittance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-3

-2.5

-2

-1.5

-1

-0.5

VGS - Volts

TJ = 125

- 40

VDS = 30V

Fig. 11. Transconductance

0.4

0.8

1.2

1.6

2.4

2.8

3.2

ID - Amperes

VDS = 30V

TJ = - 40

125

Fig. 12. Normalized Breakdown and Threshold

Voltages vs. Junction Temperature

0.8

0.9

1.0

1.1

1.2

1.3

-50

-25

100

125

150

TJ - Degrees Centigrade

VGS(off) @ VDS = 25V

BVDSX @ VGS = - 5V

Fig. 7. Dynamic Resistance vs. Gate Voltage

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

1.E+11

-3.8

-3.6

-3.4

-3.2

-3.0

-2.8

-2.6

-2.4

VGS - Volts

∆VDS = 1300V - 300V

TJ = 100

TJ = 25

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