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74LVC3G07DP датащи(PDF) 7 Page - NXP Semiconductors |
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74LVC3G07DP датащи(HTML) 7 Page - NXP Semiconductors |
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7 / 14 page ![]() 9397 750 14542 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 01 February 2005 7 of 14 Philips Semiconductors 74LVC3G07 Triple buffer with open-drain output [1] All typical values are measured at nominal VCC and Tamb = 25 °C. [2] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = number of inputs switching; ∑(C L × VCC 2 × f o) = sum of outputs. [3] The condition is VI = GND to VCC. 13. Waveforms CPD power dissipation capacitance per gate VCC = 3.3 V [2] [3] - 6.5 - pF Tamb = −40 °C to +125 °C tPLZ, tPZL propagation delay input nA to output nY see Figure 6 and 7 VCC = 1.65 V to 1.95 V 1.0 - 8.4 ns VCC = 2.3 V to 2.7 V 0.5 - 5.5 ns VCC = 2.7 V 1.0 - 5.3 ns VCC = 3.0 V to 3.6 V 0.5 - 4.7 ns VCC = 4.5 V to 5.5 V 0.5 - 3.7 ns Table 9: Dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Measurement points are given in Table 10. VOL is typical output voltage drop that occurs with the output load. Fig 6. The input (nA) to output (nY) propagation delays mna528 tPLZ VX nY output nA input VI VCC VM VOL GND tPZL VM |
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