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TMUX6119 датащи(PDF) 16 Page - Texas Instruments |
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TMUX6119 датащи(HTML) 16 Page - Texas Instruments |
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16 / 23 page ![]() 16 TMUX6119 SCDS384 – SEPTEMBER 2018 www.ti.com Product Folder Links: TMUX6119 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Feature Description (continued) The TMUX6119 utilizes special charge-injection cancellation circuitry that reduces the source (SA or SB)-to-drain (D) charge injection to as low as 0.2 pC at VS = 0 V, as shown in Figure 14. Figure 14. Source-to-Drain Charge Injection vs Source or Drain Voltage The drain (D)-to-source (SA or SB) charge injection becomes important when the device is used as a demultiplexer (demux), where D becomes the input and Sx becomes the output. Figure 15shows the drain-to- source charge injection across the full signal range. Figure 15. Drain-to-Source Charge Injection vs Source or Drain Voltage 8.3.3 Bidirectional and Rail-to-Rail Operation The TMUX6119 conducts equally well from source (SA or SB) to drain (D) or from drain (D) to source (SA or SB). Each TMUX6119 channel has very similar characteristics in both directions. The valid analog signal for TMUX6119 ranges from VSS to VDD. The input signal to the TMUX6119 swings from VSS to VDD without any significant degradation in performance. 8.4 Device Functional Modes When the EN pin of the TMUX6119 is pulled high, one of the two switches is closed based on the state of the IN pin. When the EN pin is pulled low, both switches remain open irrespective of the state of the IN pin. The EN pin is weakly pull-down internally through a 6M Ω resistor, thereby setting each channel to the open state if the EN pin is not actively driven. The IN pin is also weakly pulled-down through an internal 6Mohm resistor, allowing channel A (SA to D) to be selected by default when EN pin is driven high. Both the EN pin and the IN pin can be connected to VDD (as high as 16.5 V). |
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