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OP804TXV датащи(PDF) 2 Page - TT Electronics. |
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OP804TXV датащи(HTML) 2 Page - TT Electronics. |
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2 / 2 page ![]() © TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. High Reliability NPN Silicon Phototransistor OP803, OP804, OP805 (TX, TXV) Issue B 08/2016 Page 2 OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Absolute Maximum Ra ngs (TA=25°C unless otherwise noted) Storage Temperature Range 65° C to +150° C Opera ng Temperature Range 55° C to +125° C Collector Emi er Voltage 30 V Emi er Collector Voltage (applies to all OP800 and OP830 devices) 5 V Lead Soldering Temperature [ 1/16 inch (1.6mm) fro case for 5 seconds with soldering iron] (1) 260° C Power Dissipa on (2) 250 mW Collector Base Voltage 30 V Emi er Base Voltage 5 V Electrical Characteris cs (TA = 25°C unless otherwise noted) Input Diode SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS IC (ON) On State Collector Current OP803 (TX, TXV) OP804 (TX, TXV OP805 (TX, TXV) 4.0 7.0 15.0 8 22 mA VCE = 5.0V, Ee = 20 mW/cm 2(3) ICEO Collector Emi er Dark Current 100 nA VCE = 10.0 V, Ee = 0 100 μA VCE = 30.0 V, Ee = 0 TA = 100° C V(BR)CEO Collector Base Breakdown Voltage 30 V IC= 100 μA, IB= 0, Ee = 0 V(BR)ECO Emi er Collector Breakdown Voltage 7.0 V IC= 100 μA, Ee = 0 VCE(SAT) Collector Emi er Satura on Voltage 0.40 V IC = 0.4 mA, Ee = 20 mW/cm (2)(3) tf Rise Time OP804 (TX, TXV) OP805 (TX, TXV) 10.0 15.0 VCC = 30 V, IC = 1.00 mA, RL = 100 tr Fall Time OP804 (TX, TXV) OP8045 (TX, TXV) 10.0 15.0 μs Notes: (1) RMA ux is recommended. Dura on can be extended to 10 seconds maximum when ow soldering. (2) Derate linearly 2.5 mW/° C above 25° C. (3) Light source is an un ltered rungsten lamp operated at a temperature of 2870 K |
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