LE25S20FD

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17

AC Characteristics

Parameter

Symbol

Ratings

unit

min

typ

max

Clock frequency

Read instruction (03h)

fCLK

25

MHz

All instructions except for read (03h)

40

MHz

Input signal rising/falling time

tRF

0.1

V/ns

SCK logic high level pulse width

25 MHz

tCLHI

14

ns

40 MHz

11.5

SCK logic low level pulse width

25 MHz

tCLLO

14

ns

40 MHz

11.5

CS setup time

tCSS

10

ns

CS hold time

tCSH

10

ns

Data setup time

tDS

5

ns

Data hold time

tDH

5

ns

CS wait pulse width

tCPH

25

ns

Output high impedance time from CS

tCHZ

15

ns

Output data time from SCK

tV

8

11

ns

Output data hold time

tHO

1

ns

Output low impedance time from SCK

tCLZ

0

ns

WP setup time

tWPS

20

ns

WP hold time

tWPH

20

ns

HOLD setup time

tHS

5

ns

HOLD hold time

tHH

5

ns

Output low impedance time from HOLD

tHLZ

12

ns

Output high impedance time from HOLD

tHHZ

9

ns

Power-down time

tDP

5

s

Power-down recovery time

tPRB

5

s

Write status register time

tSRW

8

10

ms

Page programming cycle time

256 Byte

tPP

3

3.5

ms

n Byte

0.15+

n*2.85/256

0.20+

n*3.30/256

ms

Small sector erase cycle time

tSSE

0.04

0.15

s

Sector erase cycle time

tSE

0.08

0.25

s

Chip erase cycle time

tCHE

0.3

3.0

s

AC Test Conditions

Input pulse level············· 0.2VDD to 0.8VDD

Input rising/falling time ···· 5 ns

Input timing level ··········· 0.3VDD, 0.7VDD

Output timing level ········· 1/2

VDD

Output load ·················· 15 pF

Note : As the test conditions for "typ", the measurements are conducted using 1.8 V for VDD at room temperature.

0.8VDD

0.2VDD

0.7VDD

1/2VDD

0.3VDD

input level

input / output timing level

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.