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TH72012 датащи(PDF) 5 Page - Melexis Microelectronic Systems

номер детали TH72012
подробное описание детали  433MHz ASK Transmitter
PDF  21 Pages
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производитель  MELEXIS [Melexis Microelectronic Systems]
домашняя страница  http://www.melexis.com
Logo MELEXIS - Melexis Microelectronic Systems

TH72012 датащи(HTML) 5 Page - Melexis Microelectronic Systems

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TH72012
433MHz
ASK Transmitter
Page 5 of 21
REVISION 013 - JUNE 14, 2017
3901072012
fc
f
eff
CL
eff
CL
R1
C1
C0
L1
XTAL
CL=
CX1 CRO
CX1+CRO
2. Functional Description
2.1. Crystal Oscillator
A Colpitts crystal oscillator with integrated functional capacitors is used as the reference oscillator for the PLL
synthesizer. The equivalent input capacitance CRO offered by the crystal oscillator input pin ROI is about 18pF. The
crystal oscillator is provided with an amplitude control loop in order to have a very stable frequency over the specified
supply voltage and temperature range in combination with a short start-up time.
2.2. ASK Modulation
The PLL transmitter can be ASK-modulated by
applying a data stream directly at the pin ASKDTA.
This turns the internal current sources of the power
amplifier on and off and therefore leads to an ASK
signal at the output.
ASKDTA
Description
0
Power amplifier is turned off
1
Power amplifier is turned on (according to
the selected output power step)
2.3. Crystal Pulling
A crystal is tuned by the manufacturer to the
required oscillation frequency f0 at a given load
capacitance CL and within the specified calibration
tolerance. The only way to pull the oscillation
frequency is to vary the effective load capacitance
CLeff seen by the crystal.
Figure 2 shows the oscillation frequency of a crystal
as a function of the effective load capacitance. This
figure also illustrates the relationship between the
external pulling capacitor and the center frequency.
It can be seen that the pulling sensitivity increases
with the reduction of CL. For high-accuracy ASK
applications, a higher load capacitance should be
chosen in order to reduce the frequency drift
caused by the tolerances of the chip and the
external pulling capacitor.
Fig. 2: Crystal pulling characteristic



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