2SC5682

No.6608-1/4

Features

•

High speed.

•

High breakdown voltage(VCBO=1500V).

•

High reliability(Adoption of HVP process).

•

Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1500

V

Collector-to-Emitter Voltage

VCEO

800

V

Emitter-to-Base Voltage

VEBO

5V

Collector Current

IC

20

A

Collector Current (Pulse)

ICP

40

A

Collector Dissipation

PC

3.0

W

Tc=25

°C95

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=800V, IE=0

10

µA

Collector Cutoff Current

ICES

VCE=1500V, RBE=0

1.0

mA

Collector Sustain Voltage

VCEO(sus)

IC=100mA, IB=0

800

V

Emitter Cutoff Current

IEBO

VEB=4V, IC=0

1.0

mA

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6608A

2SC5682

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Package Dimensions

unit : mm

2174A

[2SC5682]

42501 TS IM TA-3147 / 71400 TS IM TA-2891

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Triple Diffused Planar Silicon Transistor

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PMLH

16.0

3.4

2.0

2.8

2.1

5.45

5.45

0.7

0.9

5.6

3.1

12

3