©

2001

NPN SILICON EPITAXIAL TRANSISTOR

2SC4783

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No.

D15616EJ1V0DS00 (1st edition)

Date Published

July 2001 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

The 2SC4783 is NPN silicon epitaxial transistor.

FEATURES

Collector to Base Voltage

60

V

Collector to Emitter Voltage

50

V

Emitter to Base Voltage

5.0

V

Collector Current (DC)

100

mA

Collector Current (pulse)

Note1

200

mA

Note2

200

mW

Junction Temperature

150

°C

Storage Temperature Range

–55 to + 150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 3.0 cm

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

100

nA

Emitter Cut-off Current

100

nA

DC Current Gain

Note

50

−

90

200

600

−

Base to Emitter Voltage

Note

0.62

V

Collector Saturation Voltage

Note

0.15

0.3

V

Base Saturation Voltage

Note

0.86

1.0

V

Gain Bandwidth Product

−10 mA

150

250

MHz

Output Capacitance

3.0

4.0

pF

Note Pulsed: PW

≤ 350

µs, Duty Cycle ≤ 2%

Marking

L4

L5L6L7

90 to 180

135 to 270

200 to 400

300 to 600

PACKAGE DRAWING (Unit: mm)

0.3 ± 0.05

2

0.2

+0.1

–0

0.5

1: Emitter

2: Base

3: Collector

0.5

1.0

1.6 ± 0.1

3

1

0.6

0.75 ± 0.05

0 to 0.1

0.1

+0.1

–0.05