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2SC4745 датащи(PDF) 1 Page - Hitachi Semiconductor |
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2SC4745 датащи(HTML) 1 Page - Hitachi Semiconductor |
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1 / 4 page ![]() Feature • High speed switching tf = 0.2 µs typ • High breakdown voltage VCBO = 1500 V • Isolated package; TO-3PFM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 1500 V ————————————————————– Collector to emitter voltage VCEO 800 V ————————————————————– Emitter to base voltage VEBO 6V ————————————————————– Collector current IC 6A ————————————————————– Collector peak current iC(peak) 7A ————————————————————– Collector surge current iC(surge) 16 A ————————————————————– Collector power dissipation PC*1 50 W ————————————————————– Junction temperature Tj 150 °C ————————————————————– Storage temperature Tstg –55 to °C +150 ————————————————————– Note: 1. Value at TC = 25°C. 1 2 3 TO-3PFM 1. Base 2. Collector 3. Emitter Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 800 — — V IC = 10 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 6 ——V IE = 10 mA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICES — — 500 µA VCE = 1500 V, RBE = 0 ——————————————————————————————————————————— DC current transfer ratio hFE 7 — 30 VCE = 5 V, IC = 1 A ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) ——5 V IC = 5 A, IB = 1 A ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat) — — 1.5 V IC = 5 A, IB = 1 A ——————————————————————————————————————————— 2SC4745 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output |
Аналогичный номер детали - 2SC4745 |
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Аналогичное описание - 2SC4745 |
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